Nexperia

PEMZ1

NPN/PNP general purpose transistor

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor; for the PNP transistor with negative polarity

VCB = 30 V; IE = 0 A; Tamb = 25 °C

-

-

100

nA

ICBO

collector-base cut-off

current

VCB = 30 V; IE = 0 A; Tj = 150 °C

-

-

10

µA

IEBO

emitter-base cut-off

current

VEB = 4 V; IC = 0 A; Tamb = 25 °C

-

-

100

nA

hFE

DC current gain

VCE = 6 V; IC = 1 mA; Tamb = 25 °C

120

-

-

VCEsat

collector-emitter

saturation voltage

IC = 50 mA; IB = 5 mA; pulsed; tp ≤

300 µs; δ ≤ 0.02; Tamb = 25 °C

-

-

200

mV

fT

transition frequency

VCE = 12 V; IC = 2 mA; f = 100 MHz;

Tamb = 25 °C

100

-

-

MHz

Transistor 1 (NPN)

Cc

collector capacitance

VCB = 12 V; IE = 0 A; ie = 0 A; f = 1 MHz;

Tamb = 25 °C

-

-

1.5

pF

Transistor 2 (PNP)

Cc

collector capacitance

VCB = -12 V; IE = 0 A; ie = 0 A;

f = 1 MHz; Tamb = 25 °C

-

-

2.2

pF

0

100

200

300

400

mhc005

10- 1

1

10

hFE

IC (mA)

102

103

TR1 (NPN): VCE = 5 V

Fig. 1. DC current gain as a function of collector

current; typical values

0

100

200

300

400

mhc004

- 10- 1

- 1

- 10

hFE

IC (mA)

- 102

- 103

TR2 (PNP): VCE = -5 V

Fig. 2. DC current gain as a function of collector

current; typical values

PEMZ1

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Product data sheet

29 December 2022

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