CS4412 datasheet(6/22 Pages) CIRRUS

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DS749A1

CS4412

PWM POWER OUTPUT CHARACTERISTICS

Test Conditions (unless otherwise specified): GND = PGND = 0 V; All voltages with respect to ground; TA = 25° C;

VD = 3.3 V; VP = 18 V; RL = 8 Ω for full-bridge, RL = 4 Ω for half-bridge and parallel full-bridge; PWM Switch Rate

= 384 kHz; 10 Hz to 20 kHz Measurement Bandwidth; Input source is CS4525 PWM_SIG outputs; Performance

measurements taken with a full scale 997 Hz sine wave and AES17 filter.

Parameters

Symbol

Conditions

Min

Typ

Max

Units

Power Output per Channel

Stereo Full-Bridge

Half-Bridge

Parallel Full-Bridge

THD+N < 10%

THD+N < 1%

THD+N < 10%

THD+N < 1%

THD+N < 10%

THD+N < 1%

5.5

23.5

Total Harmonic Distortion + Noise

Stereo Full-Bridge

Half-Bridge

Parallel Full-Bridge

THD+N

PO = 1 W

PO = 0 dBFS = 11.3 W

PO = 1 W

PO = 0 dBFS = 5.0 W

PO = 1 W

PO = 0 dBFS = 22.6 W

0.1

0.3

0.1

0.3

0.1

0.3

Dynamic Range

Stereo Full-Bridge

Half-Bridge

Parallel Full-Bridge

DYR

PO = -60 dBFS, A-Weighted

PO = -60 dBFS, Unweighted

PO = -60 dBFS, A-Weighted

PO = -60 dBFS, Unweighted

PO = -60 dBFS, A-Weighted

PO = -60 dBFS, Unweighted

102

MOSFET On Resistance

RDS(ON)

Id = 0.5 A, TJ =50°C

518

615

Efficiency

PO = 2 x 11.3 W, RL = 8 Ω

-85

Minimum Output Pulse Width

PWmin

No Load

Rise Time of OUTx

Resistive Load

Fall Time of OUTx

Resistive Load

PWM Output Over-Current Error Trip Point

ICE

OCREF = 16.2 k

2.4

Junction Thermal Warning Trip Point

TTW

120

°C

Junction Thermal Error Trip Point

TTE

140

°C

VP Under-Voltage Error Trip Point

VUV

4.5

Ramp-Up Time - Half-Bridge Configuration

TRU

Capacitor = 1000 µF

0.8

Ramp-Down Time- Half-Bridge Configuration

TRD

Capacitor = 1000 µF

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