BSP43 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 26

Philips Semiconductors

Product speciﬁcation

NPN medium power transistors

BSP41; BSP43

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see

“Thermal considerations for SOT223 in the General Part of associated

Handbook”.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.01.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

K/W

Rth j-s

thermal resistance from junction to soldering point

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =60V

−

100

IE = 0; VCB =60V; Tj = 150 °C

−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−

100

hFE

DC current gain

IC = 100 µA; VCE = 5 V; note 1

−

IC = 100 mA; VCE = 5 V; note 1

100

300

IC = 500 mA; VCE = 5 V; note 1

−

VCEsat

collector-emitter saturation voltage

IC = 150 mA; IB = 15 mA; note 1

−

0.25

IC = 500 mA; IB = 50 mA; note 1

−

0.5

VBEsat

base-emitter saturation voltage

IC = 150 mA; IB = 15 mA; note 1

−

IC = 500 mA; IB = 50 mA; note 1

−

1.2

transition frequency

IC = 50 mA; VCE = 10 V; f = 100 MHz

100

−

MHz

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