1999 Apr 26

2

Philips Semiconductors

Product specification

NPN medium power transistors

BSP41; BSP43

FEATURES

• High current (max. 1 A)

• Low voltage (max. 80 V).

APPLICATIONS

• Telephony and general industrial applications

• Thick and thin-film circuits.

DESCRIPTION

NPN medium power transistor in a SOT223 plastic

package. PNP complements: BSP31; BSP32 and BSP33.

PINNING

PIN

DESCRIPTION

1

base

2,4

collector

3

emitter

Fig.1 Simplified outline (SOT223) and symbol.

handbook, halfpage

4

12

3

MAM287

Top view

3

2, 4

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

For other mounting conditions, see

“Thermal considerations for SOT223 in the General Part of associated

Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BSP41

−

70

V

BSP43

−

90

V

collector-emitter voltage

open base

BSP41

−

60

V

BSP43

−

80

V

emitter-base voltage

open collector

−

5V

collector current (DC)

−

1A

peak collector current

−

2A

peak base current

−

0.2

A

total power dissipation

−

1.3

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C