BSP31 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 26

Philips Semiconductors

Product speciﬁcation

PNP medium power transistors

BSP31; BSP32; BSP33

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see

“Thermal considerations for SOT223 in the General Part of associated

Handbook”.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.01.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

K/W

Rth j-s

thermal resistance from junction to soldering point

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −60 V

−−100

IE = 0; VCB = −60 V; Tj = 150 °C

−−50

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−100

hFE

DC current gain

BSP32

IC = −100 µA; VCE = −5 V; note 1

−

IC = −100 mA; VCE = −5 V; note 1

120

IC = −500 mA; VCE = −5 V; note 1

−

DC current gain

BSP31; BSP33

IC = −100 µA; VCE = −5 V; note 1

−

IC = −100 mA; VCE = −5 V; note 1

100

300

IC = −500 mA; VCE = −5 V; note 1

−

VCEsat

collector-emitter saturation voltage IC = −150 mA; IB = −15 mA; note 1

−−250

IC = −500 mA; IB = −50 mA; note 1

−−500

VBEsat

base-emitter saturation voltage

IC = −150 mA; IB = −15 mA; note 1

−−1V

IC = −500 mA; IB = −50 mA; note 1

−−1.2

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−

emitter capacitance

IC =ic = 0; VEB = −0.5 V; f = 1 MHz

−

120

transition frequency

IC = −50 mA; VCE = −10 V; f = 100 MHz

100

−

MHz

Switching times (between 10% and 90% levels)

ton

turn-on time

ICon = −100 mA; IBon = −5 mA; IBoff =5mA

−

500

toff

turn-off time

−

650

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