1999 Apr 26

2

Philips Semiconductors

Product specification

PNP medium power transistors

BSP31; BSP32; BSP33

FEATURES

• High current (max. 1 A)

• Low voltage (max. 80 V).

APPLICATIONS

• Telephony and general industrial applications.

DESCRIPTION

PNP medium power transistor in a SOT223 plastic

package. NPN complements: BSP41 and BSP43.

PINNING

PIN

DESCRIPTION

1

base

2, 4

collector

3

emitter

Fig.1 Simplified outline (SOT223) and symbol.

handbook, halfpage

4

12

3

MAM288

Top view

3

2, 4

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

For other mounting conditions, see

“Thermal considerations for SOT223 in the General Part of associated

Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BSP31

−−70

V

BSP32; BSP33

−−90

V

collector-emitter voltage

open base

BSP31

−−60

V

BSP32; BSP33

−−80

V

emitter-base voltage

open collector

−−5V

collector current (DC)

−−1A

peak collector current

−−2A

peak base current

−−200

mA

total power dissipation

−

1.3

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C