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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BSP220 датащи(PDF) 4 Page - NXP Semiconductors |
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BSP220 датащи(HTML) 4 Page - NXP Semiconductors |
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4 / 12 page  April 1995 4 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP220 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT −V(BR)DSS drain-source breakdown voltage −ID = 10 µA VGS = 0 200 −− V −I DSS drain-source leakage current −VDS = 160 V VGS = 0 −− 1 µA ±IGSS gate-source leakage current ±VGS = 20 V VDS = 0 −− 100 nA −V GS(th) gate-source threshold voltage −ID = 1 mA VGS = VDS 0.8 − 2.8 V RDS(on) drain-source on-resistance −ID = 200 mA −VGS = 10 V − 10 12 Ω Y fs transfer admittance −ID = 200 mA −VDS = 25 V 100 200 − mS Ciss input capacitance −VDS = 25 V VGS = 0 f = 1 MHz − 65 90 pF Coss output capacitance −VDS = 25 V VGS = 0 f = 1 MHz − 20 30 pF Crss feedback capacitance −VDS = 25 V VGS = 0 f = 1 MHz − 615 pF Switching times (see Figs 2 and 3) ton turn-on time −ID = 250 mA −VDD = 50 V −VGS = 0 to 10 V − 520 ns toff turn-off time −ID = 250 mA −VDD = 50 V −VGS = 0 to 10 V − 20 30 ns |
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