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BSP220 датащи(PDF) 2 Page - NXP Semiconductors |
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BSP220 датащи(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page ![]() April 1995 2 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP220 FEATURES • Low RDS(on) • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line transformer drivers. PINNING - SOT223 PIN DESCRIPTION 1 gate 2 drain 3 source 4 drain QUICK REFERENCE DATA PIN CONFIGURATION SYMBOL PARAMETER CONDITIONS MAX. UNIT −VDS drain-source voltage 200 V −I D drain current DC value 225 mA RDS(on) drain-source on-resistance −ID = 200 mA −VGS = 10 V 12 Ω −V GS(th) gate-source threshold voltage 2.8 V Fig.1 Simplified outline and symbol. handbook, halfpage MAM121 4 12 3 Top view s d g |
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