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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BSP205 датащи(PDF) 2 Page - NXP Semiconductors |
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BSP205 датащи(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page  April 1995 2 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP205 DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers. FEATURES • Very low R DS(on) • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown PINNING - SOT223 1 = gate 2 = drain 3 = source 4 = drain QUICK REFERENCE DATA Drain-source voltage −V DS max. 60 V Drain current (DC) −ID max. 275 mA Drain-source ON-resistance −I D = 200 mA; −VGS = 10 V RDS(on) max. 10 Ω Gate threshold voltage −V GS(th) max. 3.5 V PIN CONFIGURATION Marking code BSP205 Fig.1 Simplified outline and symbol. handbook, halfpage MAM121 4 12 3 Top view s d g |
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