BSP204 datasheet(4/12 Pages) PHILIPS

номер детали	BSP204

подробное описание детали	P-channel enhancement mode vertical D-MOS transistor

PDF	12 Pages

Scroll/Zoom	100%

производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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4 / 12 page

April 1995

Philips Semiconductors

Product speciﬁcation

P-channel enhancement mode vertical

D-MOS transistor

BSP204; BSP204A

CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX. UNIT

−V(BR)DSS

drain-source breakdown voltage

−ID = 10 µA

VGS = 0

200

−−

−I

DSS

drain-source leakage current

−VDS = 160 V

VGS = 0

−−

µA

±IGSS

gate-source leakage current

±VGS = 20 V

VDS = 0

−−

100

−V

GS(th)

gate-source threshold voltage

−ID = 1 mA

VGS = VDS

0.8

−

2.8

RDS(on)

drain-source on-resistance

−ID = 200 mA

−VGS = 10 V

−

Ω

| Y

fs|

transfer admittance

−ID = 200 mA

−VDS = 25 V

100

200

−

Ciss

input capacitance

−VDS = 25 V

−VGS = 0

f = 1 MHz

−

Coss

output capacitance

−VDS = 25 V

−VGS = 0

f = 1 MHz

−

Crss

feedback capacitance

−VDS = 25 V

−VGS = 0

f = 1 MHz

−

615

Switching times (see Figs 2 and 3)

ton

turn-on time

−ID = 250 mA

−VDD = 50 V

−VGS = 0 to 10 V

−

510

toff

turn-off time

−ID = 250 mA

−VDD = 50 V

−VGS = 0 to 10 V

−

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