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NTJS3151P датащи(PDF) 4 Page - ON Semiconductor |
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NTJS3151P датащи(HTML) 4 Page - ON Semiconductor |
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4 / 6 page ![]() NTJS3151P http://onsemi.com 4 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VGS = 0 V 4 08 1600 600 400 200 0 12 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0 4 1 0 Qg, TOTAL GATE CHARGE (nC) TJ = 25°C Coss Ciss Crss ID = −3.3 A TJ = 25°C 1000 6 4 2 3 Q2 Q1 10 1 1000 100 100 RG, GATE RESISTANCE (OHMS) VDD = −6.0 V ID = −1.0 A VGS = −4.5 V 2 800 4.5 td(off) td(on) tf tr 10 2 0.6 0 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) VGS = 0 V TJ = 25°C 0.7 0.1 0 3 Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Gate Charge Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 6 1400 810 QT 10000 0.2 0.5 0.3 1 2 4 0.4 1200 3.5 2.5 1.5 0.5 0.8 0.9 |
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