NTJS3151P datasheet(1/6 Pages) ONSEMI

номер детали	NTJS3151P

подробное описание детали	Trench Power MOSFET 12 V, 3.3 A, Single P?묬hannel, ESD Protected SC??8

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производитель	ONSEMI [ON Semiconductor]

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March, 2006 − Rev. 2

1

Publication Order Number:

NTJS3151/D

NTJS3151P

Trench Power MOSFET

12 V, 3.3 A, Single P−Channel,

ESD Protected SC−88

Features

• Leading Trench Technology for Low RDS(ON) Extending Battery Life

• SC−88 Small Outline (2x2 mm, SC70−6 Equivalent)

• Gate Diodes for ESD Protection

• Pb−Free Packages are Available

Applications

• High Side Load Switch

• Cell Phones, Computing, Digital Cameras, MP3s and PDAs

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Units

Drain−to−Source Voltage

VDSS

−12

V

Gate−to−Source Voltage

VGS

±12

V

Continuous Drain

Current (Note 1)

Steady

State

TA = 25 °C

ID

−2.7

A

TA = 85 °C

−2.0

t ≤ 5 s

TA = 25 °C

−3.3

Power Dissipation

(Note 1)

Steady

State

TA = 25 °C

PD

0.625

W

Pulsed Drain Current

tp = 10 ms

IDM

−8.0

A

Operating Junction and Storage Temperature

TJ,

TSTG

−55 to

150

°C

Source Current (Body Diode)

IS

−0.8

A

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

TL

260

°C

THERMAL RESISTANCE RATINGS (Note 1)

Parameter

Symbol

Max

Units

Junction−to−Ambient – Steady State

RqJA

200

°C/W

Junction−to−Ambient − t ≤ 5 s

RqJA

141

Junction−to−Lead – Steady State

RqJL

102

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [1 oz] including traces).

SC−88/SOT−363

CASE 419B

STYLE 28

MARKING DIAGRAM &

PIN ASSIGNMENT

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

TJ M G

G

1

6

1

TJ

= Device Code

M

= Date Code

G

= Pb−Free Package

DD

S

DD

G

(Note: Microdot may be in either location)

V(BR)DSS

RDS(on) Typ

ID Max

−12 V

45 mW @ −4.5 V

67 mW @ −2.5 V

133 mW @ −1.8 V

−3.3 A

Top View

SC−88 (SOT−363)

D

S

D

6

5

4

1

2

3

G

S

D

G

3 kW

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