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CS5165A датащи(PDF) 13 Page - ON Semiconductor |
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CS5165A датащи(HTML) 13 Page - ON Semiconductor |
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13 / 18 page ![]() CS5165A http://onsemi.com 13 Figure 24. Power Good Response to an Out of Regulation Condition Trace 4− VFB (1.0 V/div.) Trace 2− PWRGD (2.0 V/div.) Figure 24 shows the relationship between the regulated output voltage VFB and the Power Good signal. To prevent Power Good from interrupting the CPU unnecessarily, the CS5165A has a built−in delay to prevent noise at the VFB pin from toggling Power Good. The internal time delay is designed to take about 75 ms for Power Good to go low and 65 ms for it to recover. This allows the Power Good signal to be completely insensitive to out of regulation conditions that are present for a duration less than the built in delay (see Figure 25). It is therefore required that the output voltage attains an out of regulation or in regulation level for at least the built−in delay time duration before the Power Good signal can change state. Figure 25. Power Good is Insensitive to Out of Regulation Conditions that are Present for a Duration Less Than the Built In Delay Trace 4− VFB (1.0 V/div.) Trace 2− PWRGD (2.0 V/div.) Selecting External Components The CS5165A buck regulator can be used with a wide range of external power components to optimize the cost and performance of a particular design. The following information can be used as general guidelines to assist in their selection. NFET Power Transistors Both logic level and standard FETs can be used. The reference designs derive gate drive from the 12 V supply which is generally available in most computer systems and utilize logic level FETs. A charge pump may be easily implemented to support 5.0 V only systems. Multiple FET’s may be paralleled to reduce losses and improve efficiency and thermal management. Voltage applied to the FET gates depends on the application circuit used. Both upper and lower gate driver outputs are specified to drive to within 1.5 V of ground when in the low state and to within 2.0 V of their respective bias supplies when in the high state. In practice, the FET gates will be driven rail to rail due to overshoot caused by the capacitive load they present to the controller IC. For the typical application where VCC = 12 V and 5.0 V is used as the source for the regulator output current, the following gate drive is provided: VGS(BOTTOM) + 12 V VGS(TOP) + 12 V * 5.0 V + 7.0 V (see Figure 26) Figure 26. Gate Drive Waveforms Depicting Rail to Rail Swing Trace 3− GATE(H) (10 V/div.) Trace 1− GATE(H) − 5.0 VIN Trace 4− GATE(L) (10 V/div.) Trace 2− Inductor Switching Node (5.0 V/div.) |
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