BLY87C datasheet(4/11 Pages) PHILIPS

номер детали	BLY87C

подробное описание детали	VHF power transistor

PDF	11 Pages

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производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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4 / 11 page

August 1986

Philips Semiconductors

Product speciﬁcation

VHF power transistor

BLY87C

CHARACTERISTICS

Tj =25 °C

Note

1. Measured under pulse conditions: tp ≤ 200 µs; δ≤ 0,02.

Collector-emitter breakdown voltage

VBE = 0; IC = 5 mA

V(BR) CES

36 V

Collector-emitter breakdown voltage

open base; IC = 25 mA

V(BR)CEO

18 V

Emitter-base breakdown voltage

open collector; IE = 1 mA

V(BR)EBO

Collector cut-off current

VBE = 0; VCE = 18 V

ICES

2mA

Second breakdown energy; L = 25 mH; f = 50 Hz

open base

ESBO

0,5 mJ

RBE =10 Ω

ESBR

0,5 mJ

D.C. current gain (1)

typ.

10 to 100

IC = 0,75 A; VCE =5 V

hFE

Collector-emitter saturation voltage (1)

IC = 2 A; IB = 0,4 A

VCEsat

typ.

0,85 V

Transition frequency at f = 100 MHz (1)

−IE = 0,75 A; VCB = 13,5 V

typ.

950 MHz

−I

E = 2 A; VCB = 13,5 V

typ.

850 MHz

Collector capacitance at f = 1 MHz

IE =Ie =0;VCB = 13,5 V

typ.

16,5 pF

Feedback capacitance at f = 1 MHz

IC = 100 mA; VCE = 13,5 V

Cre

typ.

12 pF

Collector-stud capacitance

Ccs

typ.

2 pF

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