BLY87C datasheet(3/11 Pages) PHILIPS

номер детали	BLY87C

подробное описание детали	VHF power transistor

PDF	11 Pages

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производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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3 / 11 page

August 1986

Philips Semiconductors

Product speciﬁcation

VHF power transistor

BLY87C

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (VBE = 0)

peak value

VCESM

max.

36 V

Collector-emitter voltage (open base)

VCEO

max.

18 V

Emitter-base voltage (open collector)

VEBO

max.

4 V

Collector current (average)

IC(AV)

max.

1,5 A

Collector current (peak value); f

> 1 MHz

ICM

max.

4,0 A

R.F. power dissipation (f

> 1 MHz); Tmb =25 °CPrf

max.

20 W

Storage temperature

Tstg

−65 to + 150 °C

Operating junction temperature

max.

200

°C

Fig.2 D.C. SOAR.

handbook, halfpage

0.5

510

1.5

MGP820

(A)

VCE (V)

Tmb = 25 °C

Th = 70 °C

Fig.3

R.F. power dissipation; VCE ≤ 16,5 V;

> 1 MHz.

I Continuous d.c. operation

II Continuous r.f. operation

III Short-time operation during mismatch

handbook, halfpage

100

MGP821

Prf

(W)

Th (°C)

ΙΙΙ

ΙΙ

derate by 0.12 W/K

0.1 W/K

THERMAL RESISTANCE

(dissipation = 8 W; Tmb = 73,5 °C, i.e. Th = 70 °C)

From junction to mounting base (d.c. dissipation)

Rth j-mb(dc)

10,7 K/W

From junction to mounting base (r.f. dissipation)

Rth j-mb(rf)

8,6 K/W

From mounting base to heatsink

Rth mb-h

0,45 K/W

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