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BLV57 датащи(PDF) 3 Page - NXP Semiconductors |
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BLV57 датащи(HTML) 3 Page - NXP Semiconductors |
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3 / 24 page ![]() 1998 Feb 09 3 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV57 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Note 1. Dissipation of either transistor section should not exceed half rated dissipation. Collector-emitter voltage (peak value); VBE =0 vCESM max. 50 V open base VCEO max. 27 V Emitter-base voltage (open collector) VEBO max. 3,5 V Collector current per transistor section d.c. or average IC; IC(AV) max. 2 A (peak value); f 〉 1 MHz ICM max. 4 A Total power dissipation at Tmb =25 °C(1) Ptot max. 77 W(1) R.F. power dissipation (f 〉 1 MHz); Tmb =25 °C(1) Prf max. 93 W(1) Storage temperature Tstg −65 to + 150 °C Operating junction temperature Tj max. 200 °C Fig.2 D.C. SOAR.(1) (1) Second breakdown limit (independent of temperature). handbook, halfpage 10 1 MGP358 110 102 IC1 + IC2 (A) VCE (V) (1) Tmb = 25 °C Th = 70 °C |
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