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BLV57 датащи(PDF) 3 Page - NXP Semiconductors

номер детали BLV57
подробное описание детали  UHF linear push-pull power transistor
PDF  24 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BLV57 датащи(HTML) 3 Page - NXP Semiconductors

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1998 Feb 09
3
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Note
1. Dissipation of either transistor section should not exceed half rated dissipation.
Collector-emitter voltage
(peak value); VBE =0
vCESM
max.
50 V
open base
VCEO
max.
27 V
Emitter-base voltage (open collector)
VEBO
max.
3,5 V
Collector current per transistor section
d.c. or average
IC; IC(AV)
max.
2 A
(peak value); f
〉 1 MHz
ICM
max.
4 A
Total power dissipation at Tmb =25 °C(1)
Ptot
max.
77 W(1)
R.F. power dissipation (f
〉 1 MHz); Tmb =25 °C(1)
Prf
max.
93 W(1)
Storage temperature
Tstg
−65 to + 150 °C
Operating junction temperature
Tj
max.
200
°C
Fig.2 D.C. SOAR.(1)
(1) Second breakdown limit
(independent of temperature).
handbook, halfpage
10
1
MGP358
110
102
IC1 + IC2
(A)
VCE (V)
(1)
Tmb = 25 °C
Th = 70 °C



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