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BLV57 датащи(PDF) 13 Page - NXP Semiconductors |
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BLV57 датащи(HTML) 13 Page - NXP Semiconductors |
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13 / 24 page ![]() 1998 Feb 09 13 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV57 Conditions for Figs 11and 12: Typical values; VCE = 25 V; IC =2 × 0,85 A; − − − Th =25 °C; Th =70 °C; fvision = 860 MHz. Ruggedness in push-pull class-A operation The BLV57 is capable of withstanding full load mismatch (VSWR = 50 through all phases) under the following conditions: Notes 1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak sync level. Intermodulation distortion of input signal ≤−70 dB. 2. Two-tone test method (vision carrier 0 dB, sound carrier −7 dB), zero dB corresponds to peak sync level. Cross-modulation distortion (dcm) is the voltage variation (%) of sound carrier when vision carrier is switched from 0 dB to −20 dB. VCE = 25 V; IC =2 × 0,85 A; Th =70 °C; Po sync(1) ≤ 12,5 W; f = 860 MHz; Rth mb-h = 0,25 K/W. At any other composition of the output signal: PL (r.m.s. value) ≤ 5 W. Fig.13 Input impedance (series components). handbook, halfpage 400 650 900 6 2 0 4 MGP369 f (MHz) xi ri ri, xi ( Ω) |
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