IXFR4N100Q datasheet(1/2 Pages) IXYS

номер детали	IXFR4N100Q

подробное описание детали	HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Backside)

PDF	2 Pages

Scroll/Zoom	100%

производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

Logo

1 / 2 page

Isolated backside*

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

1000

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

1000

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C

3.5

A

I

DM

T

C

= 25

°C, Note 1

16

A

I

AR

T

C

= 25

°C4

A

E

AR

T

C

= 25

°C20

mJ

E

AS

T

C

= 25

°C

700

mJ

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS

5

V/ns

T

J

≤ 150°C, R

G = 2 Ω

P

D

T

C

= 25

°C80

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in.) from case for 10 s

300

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

2500

V~

Weight

5

g

ISOPLUS 247TM

HiPerFETTMPower MOSFETs

ISOPLUS247TM

(Electrically Isolated Backside)

N-Channel Enhancement Mode

Avalanche Rated, Low Q

g, High dv/dt

Features

Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

Low drain to tab capacitance(<30pF)

Low R

DS (on) HDMOS

TM process

Rugged polysilicon gate cell structure

Rated for Unclamped Inductive Load

Switching (UIS)

Fast intrinsic Rectifier

Applications

DC-DC converters

Battery chargers

Switched-mode and resonant-mode

power supplies

DC choppers

AC motor control

Advantages

Easy assembly

Space savings

High power density

G = Gate

D = Drain

S = Source

* Patent pending

E153432

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 1mA

1000

V

GS(th)

V

DS = VGS, ID = 1.5 mA

3.0

5.0 V

I

GSS

V

GS

=

±20 V

DC, VDS = 0

±100 nA

I

DSS

V

DS

= V

DSS

T

J

= 25

°C

50

µA

V

GS = 0 V

T

J

= 125

°C1 mA

R

DS(on)

V

GS = 10 V, ID = IT

3.0

Ω

Notes 2, 3

DS98860A(12/02)

IXFR 4N100Q

V

DSS

= 1000 V

I

D25

=

3.5 A

R

DS(on)

=

3.0

Ω

t

rr ≤

≤≤≤≤ 200ns

PreliminaryData

Аналогичный номер детали - IXFR4N100Q

производитель	номер детали	датащи	подробное описание детали
Inchange Semiconductor ...	IXFR4N100Q	370Kb / 3P	N-Channel MOSFET

More results

Аналогичное описание - IXFR4N100Q

производитель	номер детали	датащи	подробное описание детали
IXYS Corporation	IXFR30N50	92Kb / 4P	HiPerFET Power MOSFETs ISOPLUS247
	IXFR100N25	81Kb / 2P	HiPerFET Power MOSFETs ISOPLUS247
	IXFR12N100F	91Kb / 2P	HiPerFET Power MOSFETs ISOPLUS247
	IXFR26N50	34Kb / 2P	HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Back Surface)
	IXFR26N50Q	79Kb / 2P	HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Back Surface)
	IXFR180N085	42Kb / 2P	HiPerFET-TM Power MOSFETs ISOPLUS247-TM (Electrically Isolated Back Surface)
	IXFL34N100	117Kb / 2P	HiPerFETTM Power MOSFETs ISOPLUS264(Electrically Isolated Backside)
	IXFG55N50	100Kb / 2P	HiPerFET Power MOSFETs ISOPLUS247
	IXFR32N50Q	558Kb / 4P	HiPerFET Power MOSFETs ISOPLUS247
	IXFR180N07	37Kb / 2P	HiPerFET Power MOSFETs ISOPLUS247

More results

IXFR4N100Q датащи(PDF) 1 Page - IXYS Corporation

IXFR4N100Q датащи(HTML) 1 Page - IXYS Corporation

Аналогичный номер детали - IXFR4N100Q

Аналогичное описание - IXFR4N100Q

Html Pages

1 2

датащи скачать

ссылки URL