IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

Notes 2, 3

1.5

2.5

S

C

iss

1050

pF

C

oss

V

120

pF

C

rss

30

pF

t

d(on)

17

ns

t

r

V

I

T

15

ns

t

d(off)

R

32

ns

t

f

18

ns

Q

g(on)

39

nC

Q

gs

V

I

T

9nC

Notes 2, 3

Q

gd

22

nC

R

thJC

1.57

K/W

R

thCK

0.15

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

GS

= 0 V

4

A

I

SM

Repetitive; Note 1

16

A

V

SD

I

I

1.5

V

t

rr

250

n s

Q

RM

0.52

µC

I

RM

1.8

A

I

Note: 1. Pulse width limited by T

JM

2. Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

3. I

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.83

5.21

.190

.205

A

1

2.29

2.54

.090

.100

A

2

1.91

2.16

.075

.085

b

1.14

1.40

.045

.055

b

1

1.91

2.13

.075

.084

b

2

2.92

3.12

.115

.123

C

0.61

0.80

.024

.031

D

20.80

21.34

.819

.840

E

15.75

16.13

.620

.635

e

5.45 BSC

.215 BSC

L

19.81

20.32

.780

.800

L1

3.81

4.32

.150

.170

Q

5.59

6.20

.220 0.244

R

4.32

4.83

.170

.190

Terminals:

1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

4 - Drain (Collector)

IXFR 4N100Q

See IXFH4N100Q data sheet for

Characterisiticcurves.