October 1992

3

Philips Semiconductors

Product specification

UHF push-pull power MOS transistor

BLF545

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

Per transistor section unless otherwise specified.

THERMAL RESISTANCE

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage

−

65

V

±V

GS

gate-source voltage

−

20

V

DC drain current

−

3.5

A

total power dissipation

both sections equally loaded

−

92

W

storage temperature

−65

150

°C

junction temperature

−

200

°C

SYMBOL

PARAMETER

CONDITIONS

THERMAL

RESISTANCE

thermal resistance from junction to

mounting base

total device; both sections equally

loaded

1.9 K/W

thermal resistance from mounting

base to heatsink

total device; both sections equally

loaded

0.25 K/W

Fig.2 DC SOAR.

Total device; both sections equally loaded.

handbook, halfpage

1

10

110

MRA995

(1)

ID

(A)

VDS (V)

(2)

Fig.3 Power/temperature derating curves.

(1) Short-time operation during mismatch.

(2) Continuous operation.

Total device; both sections equally loaded.

handbook, halfpage

0

(1)

(2)

40

80

Ptot

(W)

160

120

40

0

80

120

MBK463

Th ( °C)