October 1992

2

Philips Semiconductors

Product specification

UHF push-pull power MOS transistor

BLF545

FEATURES

• High power gain

• Easy power control

• Good thermal stability

• Gold metallization ensures

excellent reliability

• Designed for broadband operation.

DESCRIPTION

Silicon N-channel enhancement

mode vertical D-MOS push-pull

transistor designed for

communications transmitter

applications in the UHF frequency

range.

The transistor is encapsulated in a

4-lead, SOT268 balanced flange

envelope, with two ceramic caps. The

mounting flange provides the

common source connection for the

transistors.

PINNING - SOT268

PIN

DESCRIPTION

1

drain 1

2

gate 1

3

gate 2

4

drain 2

5

source

PIN CONFIGURATION

CAUTION

The device is supplied in an antistatic package. The gate-source input must

be protected against static charge during transport and handling.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided

that the BeO discs are not damaged. All persons who handle, use or dispose

of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to

the regulations applying at the location of the user. It must never be thrown

out with the general or domestic waste.

Fig.1 Simplified outline and symbol.

handbook, halfpage

MAM395

1

2

4

3

5

Top view

d

g

s

d

g

QUICK REFERENCE DATA

MODE OF OPERATION

f

(MHz)

(V)

(W)

(dB)

(%)

CW, class-B

500

28

40

> 11

> 50