October 1992

3

Philips Semiconductors

Product specification

VHF linear push-pull power MOS transistor

BLF348

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

Per transistor section unless otherwise specified.

THERMAL RESISTANCE

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage

−

65

V

±V

GSS

gate-source voltage

−

20

V

DC drain current

−

25

A

total power dissipation

both sections equally loaded

−

500

W

storage temperature

−65

150

°C

junction temperature

−

200

°C

SYMBOL

PARAMETER

CONDITIONS

THERMAL

RESISTANCE

thermal resistance from junction to

mounting base

total device;

both sections equally loaded

0.35 K/W

thermal resistance from mounting

base to heatsink

total device;

both sections equally loaded

0.15 K/W

Fig.2 DC SOAR.

Total device; both sections equally loaded.

handbook, halfpage

1

10

110

VDS (V)

ID

(A)

(1)

MRA933

(2)

Fig.3 Power/temperature derating curves.

(1) Continuous operation.

(2) Short-time operation during mismatch.

Total device; both sections equally loaded.

handbook, halfpage

0

40

80

160

500

0

400

MGE616

120

300

200

100

Ptot

(W)

Th (°C)

(2)

(1)