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BLF348 датащи(PDF) 6 Page - NXP Semiconductors |
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BLF348 датащи(HTML) 6 Page - NXP Semiconductors |
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6 / 12 page ![]() October 1992 6 Philips Semiconductors Product specification VHF linear push-pull power MOS transistor BLF348 APPLICATION INFORMATION FOR CLASS-A OPERATION Th = 70 °C; Rth mb-h = 0.15 K/W unless otherwise specified. RF performance in a linear amplifier (common source circuit class-A circuit). RGS = 82 Ω per section; optimum load impedance per section = 0.14 + j0.14 Ω. Note 1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak synchronization level. Ruggedness in class-A operation The BLF348 is capable of withstanding a load mismatch corresponding to VSWR = 20 through all phases under the following conditions: VDS = 28 V; f = 224.25 MHz at rated output power. MODE OF OPERATION fvision (MHz) VDS (V) ID (A) Th ( °C) dim (dB) (note 1) Po sync (W) Gp (dB) class-A 224.25 28 2 × 4.6 70 −52 > 67 typ. 70 > 11 typ. 12.5 224.25 28 2 × 4.6 25 −52 typ. 75 typ. 13 224.25 28 2 × 4.6 70 −55 > 54 typ. 57 > 11 typ.12.5 224.25 28 2 × 4.6 25 −55 typ. 62 typ. 13 |
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