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BLF348 датащи(PDF) 6 Page - NXP Semiconductors

номер детали BLF348
подробное описание детали  VHF linear push-pull power MOS transistor
PDF  12 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BLF348 датащи(HTML) 6 Page - NXP Semiconductors

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October 1992
6
Philips Semiconductors
Product specification
VHF linear push-pull power MOS transistor
BLF348
APPLICATION INFORMATION FOR CLASS-A OPERATION
Th = 70 °C; Rth mb-h = 0.15 K/W unless otherwise specified.
RF performance in a linear amplifier (common source circuit class-A circuit).
RGS = 82 Ω per section; optimum load impedance per section = 0.14 + j0.14 Ω.
Note
1. Three-tone test method (vision carrier
−8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak synchronization level.
Ruggedness in class-A operation
The BLF348 is capable of withstanding a load mismatch corresponding to VSWR = 20 through all phases under the
following conditions:
VDS = 28 V; f = 224.25 MHz at rated output power.
MODE OF OPERATION
fvision
(MHz)
VDS
(V)
ID
(A)
Th
(
°C)
dim
(dB)
(note 1)
Po sync
(W)
Gp
(dB)
class-A
224.25
28
2
× 4.6
70
−52
> 67
typ. 70
> 11
typ. 12.5
224.25
28
2
× 4.6
25
−52
typ. 75
typ. 13
224.25
28
2
× 4.6
70
−55
> 54
typ. 57
> 11
typ.12.5
224.25
28
2
× 4.6
25
−55
typ. 62
typ. 13



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