BLF246B datasheet(4/16 Pages) PHILIPS

номер детали	BLF246B

подробное описание детали	VHF push-pull power MOS transistor

PDF	16 Pages

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производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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4 / 16 page

2000 Feb 04

Philips Semiconductors

Product speciﬁcation

VHF push-pull power MOS transistor

BLF246B

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor section

V(BR)DSS

drain-source breakdown voltage

VGS = 0; ID =10mA

−−

IDSS

drain-source leakage current

VGS = 0; VDS =28V

−−

2mA

IGSS

gate-source leakage current

VGS = ±20 V; VDS =0

−−

µA

VGSth

gate-source threshold voltage

ID = 10 mA; VDS =10V

−

4.5

gfs

forward transconductance

ID = 1.5 A; VDS = 10 V

1.2

1.8

−

RDSon

drain-source on-state resistance

ID = 1.5 A; VGS =10V

−

0.4

0.75

Ω

IDSX

on-state drain current

VGS = 10 V; VDS =10V

−

Cis

input capacitance

VGS = 0; VDS = 28 V; f = 1 MHz

−

125

−

Cos

output capacitance

VGS = 0; VDS = 28 V; f = 1 MHz

−

Crs

feedback capacitance

VGS = 0; VDS = 28 V; f = 1 MHz

−

Fig.4

Temperature coefficient of gate-source

voltage as a function of drain current; typical

values per section.

VDS =10V.

handbook, halfpage

−6

MGR739

102

103

104

T.C.

(mV/K)

ID (mA)

−4

−2

Fig.5

Drain current as a function of gate-source

voltage; typical values per section.

VDS =10V.

handbook, halfpage

020

MGR740

VGS (V)

(A)

Tj = 25 °C

125

°C

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