2000 Feb 04

2

Philips Semiconductors

Product specification

VHF push-pull power MOS transistor

BLF246B

FEATURES

• High power gain

• Easy power control

• Good thermal stability

• Gold metallization ensures

excellent reliability.

APPLICATIONS

Large signal applications in the VHF

frequency range.

DESCRIPTION

Silicon N-channel enhancement

mode vertical D-MOS push-pull

transistor encapsulated in an 8-lead

SOT161A balanced flange package

with a ceramic cap. All leads are

isolated from the flange.

PINNING - SOT161A

PIN

DESCRIPTION

1

source

2

source

3

drain 1

4

gate 1

5

drain 2

6

gate 2

7

source

8

source

PIN CONFIGURATION

CAUTION

This product is supplied in anti-static packing to prevent damage caused by

electrostatic discharge during transport and handling. For further information,

refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided

that the BeO disc is not damaged. All persons who handle, use or dispose of

this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to

the regulations applying at the location of the user. It must never be thrown

out with the general or domestic waste.

Fig.1 Simplified outline and symbol.

andbook, halfpage

MBC826

1357

2468

Top view

MBB157

g2

g1

d2

d1

s

QUICK REFERENCE DATA

MODE OF OPERATION

f

(MHz)

(V)

(W)

(dB)

η

D

(%)

CW, class-AB

175

28

60

>14

>55