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BGY2016 датащи(PDF) 2 Page - NXP Semiconductors

номер детали BGY2016
подробное описание детали  UHF amplifier module
PDF  12 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BGY2016 датащи(HTML) 2 Page - NXP Semiconductors

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2000 Jan 04
2
Philips Semiconductors
Product specification
UHF amplifier module
BGY2016
FEATURES
• 26 V nominal supply voltage
• 16 W output power into a load of 50 Ω with an RF drive
power of
≤20 mW.
APPLICATIONS
• Base station transmitting equipment operating in the
1805 to 1990 MHz frequency band.
DESCRIPTION
The BGY2016 is a three-stage UHF amplifier module in a
SOT365A package with a plastic cap. It consists of three
NPN silicon planar transistor dies mounted together with
matching and bias circuit components on a metallized
ceramic AlN substrate.
PINNING - SOT365A
PIN
DESCRIPTION
1
RF input
2VS1
3VS2
4
RF output
Flange
ground
handbook, halfpage
MSA447
2
13
4
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Tmb =25 °C.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
MODE OF OPERATION
f
(MHz)
VS1
(V)
VS2
(V)
PL
(W)
Gp
(dB)
η
(%)
ZS; ZL
(
Ω)
CW
1805 to 1990
5
26
≥16
≥28
≥30
50
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VS1
DC supply voltage
4.5
5.5
V
VS2
DC supply voltage
28
V
PD
input drive power
120
mW
PL
load power
Tmb =25 °C
20
W
Tstg
storage temperature
−30
+100
°C
Tmb
operating mounting base temperature
−10
+90
°C



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