BFG10SLASHX datasheet(3/10 Pages) PHILIPS

номер детали	BFG10/X

подробное описание детали	NPN 2 GHz RF power transistor

PDF	10 Pages

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производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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3 / 10 page

1995 Aug 31

Philips Semiconductors

Product speciﬁcation

NPN 2 GHz RF power transistor

BFG10; BFG10/X

THERMAL CHARACTERISTICS

Note

1. Ts is the temperature at the soldering point of the collector pin.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to

soldering point

up to Ts =60 °C; note 1;

Ptot = 400 mW

290

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V(BR)CBO

collector-base breakdown voltage

open emitter; IC = 0.1 mA

−

V(BR)CEO

collector-emitter breakdown voltage

open base; IC = 5 mA

−

V(BR)EBO

emitter-base breakdown voltage

open collector; IE = 0.1 mA

2.5

−

ICES

collector leakage current

VCE =5V; VBE =0

−

100

µA

hFE

DC current gain

IC = 50 mA; VCE =5V

−

collector capacitance

IE =ie = 0; VCB = 3.6 V; f = 1 MHz

−

3pF

Cre

feedback capacitance

IC = 0; VCE = 3.6 V; f = 1 MHz

−

2pF

Fig.2

Power derating curve

handbook, halfpage

100

200

MLC818

150

T ( C)

Ptot

(mW)

300

500

400

100

IC = 0; f = 1 MHz.

Fig.3

Collector capacitance as a function of

collector-base voltage; typical values.

handbook, halfpage

MLC819

010

2.0

1.5

1.0

0.5

C c

(pF)

VCB (V)

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