BFG10SLASHX datasheet(4/10 Pages) PHILIPS

номер детали	BFG10/X

подробное описание детали	NPN 2 GHz RF power transistor

PDF	10 Pages

Scroll/Zoom	100%

производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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4 / 10 page

1995 Aug 31

Philips Semiconductors

Product speciﬁcation

NPN 2 GHz RF power transistor

BFG10; BFG10/X

APPLICATION INFORMATION

RF performance at Tamb =25 °C in a common-emitter test circuit (see Fig.7).

Ruggedness in class-AB operation

The BFG10 is capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated

output power under pulsed conditions up to a supply voltage of 7 V, f = 1.9 GHz and a duty cycle of 1 : 8.

MODE OF OPERATION

(GHz)

VCE

(V)

ICQ

(mA)

(mW)

(dB)

ηc

(%)

Pulsed, class-AB, duty cycle: < 1 : 8

1.9

3.6

200

>50

typ. 7

typ. 60

Pulsed, class-AB operation.

VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.

Circuit optimized for PL = 200 mW.

Fig.4

Power gain and efficiency as functions

of load power; typical values.

handbook, halfpage

500

MLC820

100

200

300

400

G p

(dB)

P (mW)

(%)

Fig.5

Load power as a function of drive

power; typical values.

Pulsed, class-AB operation.

VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.

Circuit optimized for PL = 200 mW.

handbook, halfpage

100

150

500

400

MLC821

300

200

100

P L

(mW)

P (mW)

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