BFC520 datasheet(4/12 Pages) PHILIPS

4 / 12 page

1997 Sep 10

Philips Semiconductors

Product speciﬁcation

NPN wideband cascode transistor

BFC520

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Notes

1. MSG =

2. Maximum isolation is defined as the isolation when S21 of the amplifier is reduced to unity (buffer application).

3. IC =5 mA; VCE = 3 V; RS =50 Ω; ZL = opt; Tamb =25 °C;

fp = 900 MHz; fq = 902 MHz; measured at f(2p−q) = 904 MHz.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

DC characteristics of any single transistor

V(BR)CBO

collector-base breakdown voltage

IC = 2.5 µA; IE =0

−−

V(BR)CEO

collector-emitter breakdown voltage IC =10 µA; IB =0

−−

V(BR)EBO

emitter-base breakdown voltage

IE = 2.5 µA; IC = 0

2.5

−−

ICBO

collector-base leakage current

IE = 0; VCB =6V

−−

hFE

DC current gain

IC = 20 mA; VCE = 6 V

120

250

AC characteristics of the cascode conﬁguration

transition frequency

IC = 20 mA; VC2-E1 =3V;

f = 1 GHz

−

GHz

collector capacitance T2

IE =ie = 0; VC2-B2 =1V;

f = 1 MHz

−

0.55

−

Cre2

feedback capacitance T2

IC = 0; VC2-E1 =3V;f=1MHz

−

500

−

Cre

feedback capacitance

IC = 0; VC2-E1 =3V;f=1MHz

−−

MSG

maximum stable power gain; note 1 IC = 20 mA; VC2-E1 =3V;

f = 900 MHz; Tamb =25 °C

−

IC = 20 mA; VC2-E1 =3V;

f = 2 GHz; Tamb =25 °C

−

insertion power gain

IC = 20 mA; VC2-E1 =3V;

f = 900 MHz; Tamb =25 °C

−

IC = 20 mA; VC2-E1 =3V;

f = 2 GHz; Tamb =25 °C

−

maximum isolation; note 2

f = 900 MHz

−

f = 2 GHz

−

noise ﬁgure

IC = 5 mA; VC2-E1 =3V;

f = 900 MHz;

ΓS = Γopt

−

1.3

1.6

IP3

third order intercept point (input)

note 3

−−18

−

dBm

21 s12

⁄

12 s21

⁄

–





–





–

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