BFC520 datasheet(7/12 Pages) PHILIPS

номер детали	BFC520

подробное описание детали	NPN wideband cascode transistor

PDF	12 Pages

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производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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7 / 12 page

1997 Sep 10

Philips Semiconductors

Product speciﬁcation

NPN wideband cascode transistor

BFC520

APPLICATION INFORMATION

SPICE parameters for any single BFC520 die

Note

1. These parameters have not been extracted, the

default values are shown.

SEQUENCE No.

PARAMETER

VALUE

UNIT

1.016

220.1

−

1.000

−

VAF

48.06

IKF

510.0

ISE

283.0

2.035

−

100.7

−

0.988

−

VAR

1.692

IKR

2.352

ISC

24.48

1.022

−

10.00

Ω

IRB

1.000

µA

RBM

10.00

Ω

775.3

Ω

2.210

Ω

19(1)

XTB

0.000

−

20(1)

1.110

21(1)

XTI

3.000

−

CJE

1.245

VJE

600.0

MJE

0.258

−

8.616

XTF

6.788

−

VTF

1.414

ITF

110.3

PTF

45.01

deg

CJC

447.6

VJC

189.2

MJC

0.071

−

XCJC

0.130

−

543.7

35(1)

CJS

0.000

36(1)

VJS

750.0

37(1)

MJS

0.000

−

0.780

−

Fig.10 Package equivalent circuit SOT353A

(inductance only).

handbook, halfpage

MBG216

LB2

LE2

LE1

LB1

C1/E2

Fig.11 Package capacitance (fF) between

indicated nodes.

C1/E2

MBG217

3.5

0.4

0.5

0.8

Lead and mutual inductances (nH)

LB1,2

+0.4

+0.25

M(LB1,LE1)

M(LB1,LE2)

LE1,2

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