IXFA3N80 datasheet(1/2 Pages) IXYS

номер детали	IXFA3N80

подробное описание детали	HiPerFET Power MOSFETs

PDF	2 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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1 / 2 page

Symbol

TestConditions

Maximum Ratings

V

DSS

T

J = 25°C to 150°C

800

V

DGR

T

J = 25°C to 150°C; RGS = 1 MW

800

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C

3.6

A

I

DM

T

C = 25°C, pulse width limited by TJM

14.4

A

I

AR

T

C = 25°C

3.6

A

E

AR

T

C = 25°C

10

mJ

E

AS

400

mJ

dv/dt

I

S

£ I

DM, di/dt £ 100 A/ms, VDD £ VDSS,

5

V/ns

T

J £ 150°C, RG = 2 W

P

D

T

C = 25°C

100

W

T

J

-55 to +150

°C

T

JM

150

°C

T

stg

-55 to +150

°C

T

L

1.6 mm (0.063 in) from case for 10 s

300

°C

M

d

Mounting torque (TO-220)

1.13/10 Nm/lb.in.

Weight

TO-220

4

g

TO-263

2

g

N-ChannelEnhancementMode

Avalanche Rated, Low Q

g, High dv/dt

Features

l International standard packages

l Low R

DS (on)

l Rated for unclamped Inductive load

Switching (UIS)

Advantages

l Easy to mount

l Space savings

l High power density

Symbol

TestConditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 1 mA

800

V

GS(th)

V

DS = VGS, ID = 1 mA

2.5

4.5

V

I

GSS

V

GS = ±20 VDC, VDS = 0

±100

nA

I

DSS

V

DS = VDSS

T

J

= 25°C50

mA

V

GS = 0 V

T

J

= 125°C1

mA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

3.6

W

Pulse test, t £ 300 ms, duty cycle d £ 2 %

HiPerFETTM

Power MOSFETs

V

DSS

= 800 V

I

D25

= 3.6 A

R

DS(on)

= 3.6 W

t

rr £ 250 ns

Preliminary data sheet

G

S

TO-263 (IXFA)

G D

S

TO-220 (IXFP)

G = Gate

D

= Drain

S = Source

TAB = Drain

D (TAB)

98746 (09/00)

IXFA 3N80

IXFP 3N80

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