IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol

TestConditions

Characteristic Values

(T

min.

typ. max.

g

fs

V

2.5

3.4

S

C

iss

685

pF

C

oss

V

GS

= 0 V, V

73

pF

C

rss

16

pF

t

d(on)

12

ns

t

r

V

GS

= 10 V, V

11

ns

t

d(off)

R

25

ns

t

f

14

ns

Q

g(on)

24

nC

Q

gs

V

GS

= 10 V, V

6nC

Q

gd

9nC

R

thJC

1.25

K/W

R

thCK

(TO-220)

0.25

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

TestConditions

min.

typ. max.

I

S

V

3.6

A

I

SM

Repetitive; pulse width limited by T

JM

14.4

A

V

SD

I

1.5

V

Pulse test, t £ 300 ms, duty cycle d £ 2 %

t

rr

250

ns

Q

RM

I

0.52

mC

I

RM

1.8

A

TO-263 (IXFA) Outline

1. Gate

2. Drain

3. Source

4. Drain

BottomSide

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.06

4.83

.160

.190

A1

2.03

2.79

.080

.110

b

0.51

0.99

.020

.039

b2

1.14

1.40

.045

.055

c

0.46

0.74

.018

.029

c2

1.14

1.40

.045

.055

D

8.64

9.65

.340

.380

D1

7.11

8.13

.280

.320

E

9.65

10.29

.380

.405

E1

6.86

8.13

.270

.320

e

2.54

BSC

.100

BSC

L

14.61

15.88

.575

.625

L1

2.29

2.79

.090

.110

L2

1.02

1.40

.040

.055

L3

1.27

1.78

.050

.070

L4

0

0.38

0

.015

R

0.46

0.74

.018

.029

Pins: 1 - Gate

2 - Drain

3 - Source

4 - Drain

Bottom Side

TO-220 (IXFP) Outline

IXFA 3N80

IXFP 3N80