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MC68331 датащи(PDF) 6 Page - NXP Semiconductors

номер детали MC68331
подробное описание детали  16.78 MHz Electrical Characteristics
PDF  32 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

MC68331 датащи(HTML) 6 Page - NXP Semiconductors

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MC68L300EC16/D
NOTES:
1. Applies to:
QSM pins
IRQ[7:1], RESET, EXTAL, TSC, RMC, BKPT/DSCLK, IFETCH/DSI
2. Input-Only Pins: TSC, BKPT/DSCLK, RXD
Output-Only Pins: CSBOOT, BG/CS, CLKOUT, FREEZE/QUOT, IPIPE/DSO
Input/Output Pins:
Group 1: DATA[15:0], IFETCH/DSI
Group 2: ADDR[23:19]/CS[10:6], FC[2:0]/CS[5:3], DSACK[1:0], AVEC, RMC, DS, AS, SIZ[1:0]
IRQ[7:1], MODCLK, ADDR[18:0], R/W, BERR, BR/CS0, BGACK/CS2, PCS[3:1], PCS0/SS, TXD
Group 3: HALT, RESET
Group 4: MISO, MOSI, SCK
3. Does not apply to HALT and RESET because they are open drain pins.
Does not apply to Port QS[7:0] (TXD, PCS[3:1], PCS0/SS, SCK, MOSI, MISO) in wired-OR mode.
4. Current measured at maximum system clock frequency.
5. Total operating current is the sum of the appropriate VDD supply and VDDSYN supply current.
6. When VSB is more than 0.3V greater than VDD, current flows between the VSTBY and VDD pins, which causes
standby current to increase toward the maximum condition specification. System noise on the VDD and VSTBY
pin can contribute to this condition.
7. The SRAM module will not switch into standby mode as long as VSB does not exceed VDD by more than 0.5
volts. The SRAM array cannot be accessed while the module is in standby mode.
8. Power dissipation measured at specified system clock frequency. Power dissipation can be calculated using the
expression:
PD = 3.6V (IDDSYN + IDD)
9. Input capacitance is periodically sampled rather than 100% tested.
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com



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