P-Channel Logic Level Enhancement Mode

Field Effect Transistor

REV 1.1

2

N-21-4

PECH1EU

PDFN 3.3x3.3S

Halogen-free & Lead-Free

NIKO-SEM

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

2

t ≦10s

RJA

40

°C / W

Junction-to-Ambient

2

Steady-State

RJA

58

Junction-to-Case

Steady-State

RJC

2.2

1Pulse width limited by maximum junction temperature.

2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA =25°C.

3The Power dissipation is based on R

JA t ≦10s value.

4The maximum current rating is Package limited.

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = -250A

-30

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250A

-1.3

-1.7

-2.3

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±25V

±10

uA

Zero Gate Voltage Drain Current

IDSS

VDS = -30V, VGS = 0V

-1

A

VDS = -30V, VGS = 0V, TJ = 55 °C

-10

Drain-Source On-State Resistance

5

RDS(ON)

VGS = -10V, ID = -12A

4.7

6.1

mΩ

VGS = -4.5V, ID = -12A

7.6

11

Forward Transconductance

5

gfs

VDS = -5V, ID = -12A

45

S

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = -15V, f = 1MHz

3265

pF

Output Capacitance

Coss

511

Reverse Transfer Capacitance

Crss

397

Gate Resistance

Rg

VGS = 0V, VDS = 0V, f = 1MHz

4.3

Ω

Total Gate Charge

6

Qg(VGS=-10V)

VDS = -15V , ID = -12A

67

nC

Qg(VGS=-4.5V)

33

Gate-Source Charge

6

Qgs

9

Gate-Drain Charge

6

Qgd

14