TPCF8B01 datasheet(3/4 Pages) TOSHIBA

3 / 4 page

TPCF8B01

2003-04-08

Electrical Characteristics (Ta

= 25°C)

MOSFET

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±8 V, VDS = 0 V



±10

µA

Drain cut-off current

IDSS

VDS = −20 V, VGS = 0 V



−10

µA

V (BR) DSS

ID = −10 mA, VGS = 0 V

−20



Drain-source breakdown voltage

V (BR) DSX

ID = −10 mA, VGS = 8V

−12



Gate threshold voltage

Vth

VDS = −10 V, ID = −200 µA

−0.5



−1.2

RDS (ON)

VGS = −1.8 V, ID = −0.7 A



215

300

RDS (ON)

VGS = −2.5 V, ID = −1.4A



110

160

Drain-source ON resistance

RDS (ON)

VGS = −4.5 V, ID = −1.4 A



110

Ω

Forward transfer admittance

|Yfs|

VDS = −10 V, ID = −1.4 A

2.4

4.7



Input capacitance

Ciss



470



Reverse transfer capacitance

Crss



Output capacitance

Coss

VDS = −10 V, VGS = 0 V, f = 1 MHz



Rise time



Turn-on time

ton



Fall time



Switching time

Turn-off time

toff

Duty <

= 1%, tw = 10 µs



Total gate charge

(gate-source plus gate-drain)



Gate-source charge

Qgs



Gate-drain (“miller”) charge

Qgd

VDD ∼

− −16 V, VGS = −5 V,

ID = −2.7 A



MOSFET Source-Drain Ratings and Characteristics

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse (Note 1)

IDRP



-10.8

Forward voltage (diode)

VDSF

IDR = −2.7 A, VGS = 0 V



-1.2

SBD

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

VFM(1)

IFM = 0.7 A



0.43



Peak forward voltage

VFM(2)

IFM = 1.0 A



0.46

0.49

Repetitive peak reverse current

IRRM

VRRM = 20 V



µA

Junction capacitance

VR = 10 V, f = 1 MHz



VDD ∼

− −10 V

−5 V

VGS

0 V

ID = −1.4 A

VOUT

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