TPCF8B01

2003-04-08

2

Thermal Characteristics for MOSFET and SBD

Characteristics

Symbol

Max

Unit

Single-device operation

(Note 3a)

92.6

Thermal resistance,

channel to ambient

(t

= 5 s)

(Note 2a) Single-device value at

dual operation (Note 3b)

111.6

°C/W

Single-device operation

(Note 3a)

235.8

Thermal resistance,

channel to ambient

(t

= 5 s)

(Note 2b) Single-device value at

dual operation (Note 3b)

378.8

°C/W

This transistor is an electrostatic sensitive device. Please handle with caution.

Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to the other rectifier

products.

This current leakage and improper operating temperature or voltage may cause thermal runaway.

Please take forward and reverse loss into consideration when you design.

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2: (a) Device mounted on a glass-epoxy board (a)

(b) Device mounted on a glass-epoxy board (b)

Note 3: a) The power dissipation and thermal resistance values are shown for a single device

(During single-device operation, power is only applied to one device.).

b) The power dissipation and thermal resistance values are shown for a single device

(During dual operation, power is evenly applied to both devices.).

Note 5: Repetitive rating; Pulse width limited by Max. Channel temperature.

Note 6: Rectangular waveform (

Note 7: Black round marking “●” locates on the left lower side of parts number marking “F8A” indicates terminal

No. 1.

FR-4

25.4

× 25.4 × 0.8

(単位: mm)

(b)

FR-4

25.4

× 25.4 × 0.8

(単位 t: mm)

(a)

25.4