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LM3207TL датащи(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
номер детали LM3207TL
подробное описание детали  650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers with Integrated Vref LDO
PDF  19 Pages
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производитель  NSC [National Semiconductor (TI)]
домашняя страница  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM3207TL датащи(HTML) 3 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
PV
IN to SGND
−0.2V to +6.0V
PGND to SGND
−0.2V to +0.2V
EN, FB, V
CON,ENLDO, LDO
(SGND −0.2V)
to (V
DD +0.2V)
w/6.0V max
SW
(PGND −0.2V)
to (PV
IN +0.2V)
w/6.0V max
PV
IN
−0.2V to +0.2V
Continuous Power Dissipation
(Note 3)
Internally Limited
Junction Temperature (T
J-MAX)
+150˚C
Storage Temperature Range
−65˚C to +150˚C
Maximum Lead Temperature
(Soldering, 10 sec)
+260˚C
Operating Ratings (Notes 1, 2)
Input Voltage Range
2.7V to 5.5V
Recommended Load Current
0mA to 650mA
Junction Temperature (T
J) Range
−30˚C to +125˚C
Ambient Temperature (T
A) Range
(Note 4)
−30˚C to +85˚C
Thermal Properties
Junction-to-Ambient Thermal
100˚C/W
Resistance (
θ
JA), TLA09 Package
(Note 5)
Electrical Characteristics (Notes 2, 6, 7) Limits in standard typeface are for T
A =TJ = 25˚C. Limits in bold-
face type apply over the full operating ambient temperature range (−30˚C
≤ T
A =TJ
≤ +85˚C). Unless otherwise noted, all
specifications apply to LM3207 with: PV
IN =VIN =ENLDO = EN = 3.6V.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
LDO
V
LDO
LDO Output Voltage
Iout=0mA
2.875
2.95
V
V
LDO,MIN
Minimum LDO Output Voltage Iout = 10mA, PV
IN =3V
2.80
V
I
SC
Short circuit current(DC)
V
LDO = 0
50
mA
I
PUT
Pull-up current (transient)
V
LDO =VLDO(nom)/2, PVIN =3V
(Note 12)
150
mA
I
PD
DC Pull-down current (DC)
V
LDO =PVIN,ENLDO = 0
-50
mA
I
PDT
Pull-down current (transient)
V
LDO =VLDO(nom)/2, PVIN =3V
(Note 12)
-200
mA
I
Q_LDO + PWM
DC Bias current into PV
IN
V
CON = 2V, FB = 0V, No Switching,
EN
LDO
= EN = 3.6V (Note 9)
1.2
1.6
mA
I
PIN,ENLDO
LDO Pin pull down current
5
10
uA
Switcher
V
FB, MIN
Feedback Voltage at
minimum setting
V
CON = 0.32V
0.75
0.8
0.85
V
V
FB, MAX
Feedback Voltage at
maximum setting
V
CON = 1.44V, PVIN = 4.2V
3.537
3.6
3.683
V
I
SHDN
Shutdown supply current
EN = EN
LDO=SW=VCON = 0V,
(Note 8)
0.01
2
µA
I
Q_PWM
DC bias current into PV
IN
V
CON = 2V, FB = 0V, ENLDO =0V,
EN = 3.6V, No Switching (Note 9)
1.1
1.6
mA
R
DSON(P)
Pin-pin resistance for PFET
I
SW = 200mA
140
200
m
Ω
230
R
DSON(N)
Pin-pin resistance for NFET
I
SW = - 200mA
300
415
m
Ω
485
I
LIM,PFET
Switch peak current limit
(Note 10)
935
1100
1200
mA
F
OSC
Internal oscillator frequency
1.7
2
2.3
MHz
V
IH,EN
Logic high input threshold
(PWM, LDO)
1.2
V
V
IL,EN
Logic low input threshold
(PWM, LDO)
0.5
V
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