BCV48 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 08

Philips Semiconductors

Product speciﬁcation

PNP Darlington transistors

BCV28; BCV48

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.

For other mounting conditions, see

“Thermal considerations for SOT89 in the General Part of associated Handbook”.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

K/W

Rth j-s

thermal resistance from junction to soldering point

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

BCV28

IE = 0; VCB = −30 V

−−

−100 nA

BCV48

IE = 0; VCB = −60 V

−−

−100 nA

IEBO

emitter cut-off current

IC = 0; VBE = −10 V

−−

−100 nA

hFE

DC current gain

IC = −1 mA; VCE = −5 V; see Fig.2

BCV28

4000

−−

BCV48

2000

−−

DC current gain

IC = −10 mA; VCE = −5 V; see Fig.2

BCV28

10000

−−

BCV48

4000

−−

DC current gain

IC = −100 mA; VCE = −5 V; see Fig.2

BCV28

20000

−−

BCV48

10000

−−

DC current gain

IC = −500 mA; VCE = −5 V; see Fig.2

BCV28

4000

−−

BCV48

2000

−−

VCEsat

collector-emitter saturation

voltage

IC = −100 mA; IB = −0.1 mA

−−

−1V

VBEsat

base-emitter saturation voltage

IC = −100 mA; IB = −0.1 mA

−−

−1.5

VBEon

base-emitter on-state voltage

IC = −10 mA; IB = −5mA

−−

−1.4

transition frequency

IC = −30 mA; VCE = −5V;

f = 100 MHz

−

220

−

MHz

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