1999 Apr 08

2

Philips Semiconductors

Product specification

PNP Darlington transistors

BCV28; BCV48

FEATURES

• Very high DC current gain (min. 10000)

• High current (max. 500 mA)

• Low voltage (max. 60 V).

APPLICATIONS

• Where very high amplification is required.

DESCRIPTION

PNP Darlington transistor in a SOT89 plastic package.

NPN complements: BCV29 and BCV49.

PINNING

PIN

DESCRIPTION

1

emitter

2

collector

3

base

Fig.1 Simplified outline (SOT89) and symbol.

handbook, halfpage

32

1

TR2

TR1

12

3

MAM301

Bottom view

MARKING

TYPE NUMBER

MARKING CODE

BCV28

ED

BCV48

EE

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

For other mounting conditions, see

“Thermal considerations for SOT89 in the General Part of associated Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BCV28

−−40

V

BCV48

−−80

V

collector-emitter voltage

BCV28

−−30

V

BCV48

−−60

V

emitter-base voltage

open collector

−−10

V

collector current (DC)

−−500

mA

peak collector current

−−800

mA

base current (DC)

−−100

mA

total power dissipation

1.3

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C