BAS21LL

High-voltage switching diode

27 February 2018

Product data sheet

1. General description

High-voltage switching diode, encapsulated in a leadless ultra small DFN1006-2 (SOD882)

Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

• High switching speed: trr ≤ 50 ns

• Low leakage current: IR ≤ 100 nA

• High reverse voltage VR ≤ 200 V

• Low capacitance: Cd ≤ 2 pF

• Ultra small SMD plastic package

• AEC-Q101 qualified

3. Applications

• High-speed switching

• General-purpose switching

• Voltage clamping

• Reverse polarity protection

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IF

forward current

[1]

-

-

330

mA

VR

reverse voltage

-

-

200

V

VRRM

repetitive peak reverse

voltage

Tj = 25 °C

-

-

250

V

VF

forward voltage

IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02 ;

Tj = 25 °C

-

-

1.25

V

IR

reverse current

VR = 200 V; pulsed; Tj = 25 °C

-

-

100

nA

trr

reverse recovery time

IF = 30 mA; IR = 30 mA; RL = 100 Ω;

IR(meas) = 3 mA; Tj = 25 °C

-

-

50

ns

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.