Nexperia

BAS21LL

High-voltage switching diode

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating Sytem (IEC 60134)

Symbol

Parameter

Conditions

Min

Max

Unit

VRRM

repetitive peak reverse

voltage

-

250

V

VR

reverse voltage

-

200

V

IF

forward current

Tj = 25 °C

[1]

-

330

mA

tp = 1 µs; Tj(init) = 25 °C; square wave

-

9

A

tp = 100 µs; Tj(init) = 25 °C; square wave

-

3

A

IFSM

non-repetitive peak

forward current

tp = 10 ms; Tj(init) = 25 °C; square wave

-

1.7

A

IFRM

repetitive peak forward

current

tp ≤ 1 ms; δ ≤ 0.25

-

900

mA

[1]

-

335

mW

Ptot

total power dissipation

Tamb ≤ 25 °C

[2]

-

610

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated mounting pad for cathode 1cm2.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

[1]

-

-

375

K/W

Rth(j-a)

thermal resistance

from junction to

ambient

In free air

[2]

-

-

205

K/W

Rth(j-sp)

thermal resistance

from junction to solder

point

[3]

-

-

45

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for cathode 1cm2.

[3] Soldering point of cathode tab.

BAS21LL

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Product data sheet

27 February 2018

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