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PDTA113EM датащи(PDF) 7 Page - Nexperia B.V. All rights reserved

номер детали PDTA113EM
подробное описание детали  PNP resistor-equipped transistors; R1 = 1 kW, R2 = 1 kW
PDF  19 Pages
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производитель  NEXPERIA [Nexperia B.V. All rights reserved]
домашняя страница  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved

PDTA113EM датащи(HTML) 7 Page - Nexperia B.V. All rights reserved

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PDTA113E_SER_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 2 September 2009
6 of 18
NXP Semiconductors
PDTA113E series
PNP resistor-equipped transistors; R1 = 1 k
Ω, R2 = 1 kΩ
VCE = −5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1.
DC current gain as a function of collector
current; typical values
Fig 2.
Collector-emitter saturation voltage as a
function of collector current; typical values
VCE = −0.3 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
VCE = −5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3.
On-state input voltage as a function of
collector current; typical values
Fig 4.
Off-state input voltage as a function of
collector current; typical values
IC (mA)
−10−1
−102
−10
−1
006aaa115
10
1
102
hFE
10−1
(1)
(2)
(3)
006aaa116
IC (mA)
−10
−102
−10−1
−1
VCEsat
(V)
−10−2
(1)
(3)
(2)
006aaa117
IC (mA)
−10−1
−102
−10
−1
−1
−10
VI(on)
(V)
−10−1
(1)
(2)
(3)
IC (mA)
−10−1
−10
−1
006aaa118
−1
−10
VI(off)
(V)
−10−1
(1)
(2)
(3)



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