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PDTA113EM датащи(PDF) 6 Page - Nexperia B.V. All rights reserved

номер детали PDTA113EM
подробное описание детали  PNP resistor-equipped transistors; R1 = 1 kW, R2 = 1 kW
PDF  19 Pages
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производитель  NEXPERIA [Nexperia B.V. All rights reserved]
домашняя страница  https://www.nexperia.com/
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PDTA113E_SER_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 2 September 2009
5 of 18
NXP Semiconductors
PDTA113E series
PNP resistor-equipped transistors; R1 = 1 k
Ω, R2 = 1 kΩ
7.
Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = −50 V; IE = 0 A
-
-
−100
nA
ICEO
collector-emitter
cut-off current
VCE = −30 V; IB = 0 A
-
-
−1
µA
VCE = −30 V; IB = 0 A;
Tj = 150 °C
--
−50
µA
IEBO
emitter-base cut-off
current
VEB = −5 V; IC = 0 A
-
-
−4mA
hFE
DC current gain
VCE = −5 V; IC = −40 mA
30
-
-
VCEsat
collector-emitter
saturation voltage
IC = −30 mA; IB = −1.5 mA
-
-
−150
mV
VI(off)
off-state input voltage
VCE = −5 V; IC = −100 µA-
−1.3
−0.5
V
VI(on)
on-state input voltage
VCE = −300 mV; IC = −20 mA
−2
−1.7
-
V
R1
bias resistor 1 (input)
0.7
1
1.3
k
Ω
R2/R1
bias resistor ratio
0.8
1
1.2
Cc
collector capacitance
VCB = −10 V; IE = ie = 0 A;
f=1MHz
--2
pF



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