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ISL70321SEHX/SAMPLE датащи(PDF) 21 Page - Renesas Technology Corp

номер детали ISL70321SEHX/SAMPLE
подробное описание детали  Radiation Hardened Quad Power Supply Sequencers
PDF  26 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL70321SEHX/SAMPLE датащи(HTML) 21 Page - Renesas Technology Corp

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FN8942 Rev.3.0
Page 21 of 25
Jul 30, 2021
ISL70321SEH, ISL73321SEH
6. Die and Assembly Characteristics
6.
Die and Assembly Characteristics
Table 2. Die and Assembly Related Information
Die Information
Dimensions
3300µm x 6600µm (130 mils x 260 mils)
Thickness: 483µm ± 25.4µm (19 mils ± 1mil)
Interface Materials
Glassivation
Type: Silicon Oxide and Silicon Nitride
Thickness: 0.3µm ± 0.03µm to 1.2µm ± 0.12µm
Top Metallization
Type: AlCu (99.5%/0.5%)
Thickness: 2.7µm ±0.4µm
Backside Finish
Silicon
Process
0.6µM BiCMOS Junction Isolated
Assembly Information
Substrate Potential
GND
Additional Information
Worst Case Current Density
<2 x 105 A/cm2
Transistor Count
4003
Weight of Packaged Device
0.79 grams (typical) - K18.B Package
Lid Characteristics
Finish: Gold
Lid Potential: GND



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