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BST39 датащи(PDF) 2 Page - Diodes Incorporated

номер детали BST39
подробное описание детали  350V NPN HIGH VOLTAGE TRANSISTOR IN SOT89
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

BST39 датащи(HTML) 2 Page - Diodes Incorporated

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BST39
Document number: DS33021 Rev. 5 - 2
2 of 7
www.diodes.com
July 2014
© Diodes Incorporated
BST39
A Product Line of
Diodes Incorporated
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
400
V
Collector-Emitter Voltage
VCEO
350
V
Emitter-Base Voltage
VEBO
7
V
Continuous Collector Current
IC
500
mA
Peak Pulse Current
ICM
1
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 5)
PD
1
W
(Note 6)
1.5
(Note 7)
2.0
Thermal Resistance, Junction to Ambient Air
(Note 5)
RθJA
125
°C/W
(Note 6)
83
(Note 7)
60
Thermal Resistance, Junction to Lead
(Note 8)
RθJL
22
Thermal Resistance, Junction to Case
(Note 9)
RθJC
16
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 10)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes:
5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper.
7. Same as Note 5, except the device is mounted on 50mm x 50mm 1oz copper.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).
9. Thermal resistance from junction to the top of the case.
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.



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