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BST39 датащи(PDF) 4 Page - Diodes Incorporated

номер детали BST39
подробное описание детали  350V NPN HIGH VOLTAGE TRANSISTOR IN SOT89
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

BST39 датащи(HTML) 4 Page - Diodes Incorporated

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BST39
Document number: DS33021 Rev. 5 - 2
4 of 7
www.diodes.com
July 2014
© Diodes Incorporated
BST39
A Product Line of
Diodes Incorporated
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
400
V
IC = 100µA
Collector-Emitter Breakdown Voltage (Notes 11)
BVCEO
350
V
IC = 1mA
Emitter-Base Breakdown Voltage
BVEBO
7
V
IE = 100µA
Collector Cutoff Current
ICBO
20
nA
VCB = 300V
DC Current transfer Static Ratio (Notes 11)
hFE
40
-
IC = 20mA, VCE = 10V
Collector-Emitter Saturation Voltage (Notes 11)
VCE(sat)
0.5
V
IC = 50mA, IB = 4mA
Base-Emitter Saturation Voltage (Notes 11)
VBE(sat)
1.3
V
IC = 50mA, IB = 4mA
Transitional Frequency (Notes 11)
fT
70
MHz
IC = 10mA, VCE = 10V,
f = 5MHz
Output Capacitance
Cobo
2
pF
VCB = 10V, f = 1MHz,
Input Capacitance
Cibo
20
pF
VEB = 10V, f = 1MHz,
Note:
11. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤2%.



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