HIP0061

FN3982 Rev 0.00

Page 2 of 10

December 1997

Absolute Maximum Ratings TA =25oC

Thermal Information

Drain to Source Voltage, VDS

(Over Operating Junction and Case Temperature Range). . . . .60V

Drain to Gate Voltage, VDGR. . . . . . . . . . . . . . . . . . . . . . . . . . . .60V

Gate to Source Voltage, VGS. . . . . . . . . . . . . . . . . . . . . . . -15, +20V

Pulsed Drain Current, IDM, Each Output,

All Outputs on at VGS = 10V (Notes 1, 2) . . . . . . . . . . . . . . . .10A

Continuous Source to Drain Diode Current, ISD

at VGS = 10V (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5A

Continuous Drain Current, IDS, Each Output,

All Outputs on at VGS = 10V (Note 2) . . . . . . . . . . . . . . . . . . 3.5A

Single Pulse Avalanche Energy, EAS (Note 3) . . . . . . . . . . . 100mJ

Operating Conditions

Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 125oC

Drain to Source On-State Voltage Range . . . . . . . . . . . . 5V to 10V

Thermal Resistance (Typical, Note 4)

JA (oC/W) JC (oC/W)

SIP-Vertical Package . . . . . . . . . . . . .

55

3

SIP-Gullwing Package . . . . . . . . . . . .

55

3

Maximum Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . 150oC

Maximum Storage Temperature Range, TSTG . . . . -55oC to 150oC

Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . . 300oC

Die Characteristics

Back Side Potential. . . . . . . . . . . . . . . . . . . . . . . . . V- (Source, Tab)

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:

1. Pulse width limited by maximum junction temperature.

2. Drain current limited by package construction.

3. VDD = 25V, Start TJ = 25oC, L = 15mH, RGS = 50, IPEAK = 3.5A. See Figures 1, 2, 12, and 13.

4.

JA is measured with the component mounted on an evaluation PC board in free air.

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETERS

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 100A, VGS = 0V

TC = -40oC to

125oC

60

-

-

V

TC = 25oC-

70

-

V

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250A

1.8

2.3

2.7

V

Zero Gate Voltage Drain Current

IDSS

VDS = 60V

VGS = 0V

TC = 25oC-

-

1

A

TC = 125oC-

-

10

A

Forward Gate Current, Drain Short

Circuited to Source

IGSSF

VDS = 0V, VGS =20V

-

-

100

nA

Reverse Gate Current, Drain Short

Circuited to Source

IGSSR

VDS = 0V, VGS =-15V

-

-

-100

nA

Drain to Source On Resistance (Note 5)

rDS(ON)

VGS = 10V, ID = 3.5A

TC = 25oC

-

0.215

0.265



VGS = 10V, ID = 3.5A

TC = 125oC

-

0.365

0.425



VGS = 5V, ID = 2A

TC = 25oC

-

0.275

0.320



VGS = 5V, ID = 2A

TC = 125oC

-

0.465

0.5



Drain to Source On Resistance Matching

rDS(ON)

VGS = 10V, ID = 3.5A

TC = 25oC-

95

-

%

Forward Transconductance (Note 5)

gfs

VDS = 10V, ID = 1A

-

2.5

-

S

Turn-On Delay Time (Note 6)

td(ON)

VDD = 30V, RL = 15,

VGS = +10V, ID = 2A, RG = 50

See Figure 14

-

10

-

ns

Rise Time (Note 6)

tr

-

25

-

ns

Turn-Off Delay Time (Note 6)

td(OFF)

-

18

-

ns

Fall Time (Note 6)

tf

-12-

ns

Total Gate Charge (Note 6)

Qg(TOT)

VDS = 50V, VGS = 10V, ID = 2A

See Figures 16, 17

-

8.0

9.5

nC

Gate-Source Charge (Note 6)

Qgs

-

0.7

1.0

nC

Gate-Drain Charge (Note 6)

Qgd

-

3.5

4.0

nC