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HIP0061AS2 датащи(PDF) 3 Page - Renesas Technology Corp

номер детали HIP0061AS2
подробное описание детали  60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array
PDF  10 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HIP0061AS2 датащи(HTML) 3 Page - Renesas Technology Corp

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HIP0061
FN3982 Rev 0.00
Page 3 of 10
December 1997
Short-Circuit Input Capacitance,
Common Source
CISS
VDS = 25V, VGS = 0V
f = 1MHz
-
142
-
pF
Short-Circuit Output Capacitance,
Common Source
COSS
-
107
-
pF
Short-Circuit Reverse Transfer
Capacitance, Common Source
CRSS
-
24
-
pF
Source-Drain Diode Ratings and Specifications
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Diode Forward Voltage (Note 5)
VSD
ISD = 2A, VGS = 0V
-
0.9
1.1
V
Reverse Recovery Time
trr
ISD = 2A, dISD/dt = 100A/s
-
50
-
ns
NOTES:
5. Pulse test: Pulse width
 300s, duty cycle  2%.
6. Independent of operating temperature.
Typical Performance Curves
FIGURE 1A. 25oC SAFE-OPERATING AREA CURVE
FIGURE 1B. 105oC SAFE-OPERATING AREA CURVE
Electrical Specifications
TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
0.1
10
100
1
10
1
VDS, DRAIN VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
10
s
100
s
1ms
TC = 25oC
TJ = MAX RATED
10ms
DC
100ms
0.1
10
100
1
10
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
10
s
100
s
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1ms
100
s
TC = 105oC
TJ = MAX RATED
10ms
DC
100ms



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