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PBLS4002Y датащи(PDF) 5 Page - Nexperia B.V. All rights reserved |
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PBLS4002Y датащи(HTML) 5 Page - Nexperia B.V. All rights reserved |
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5 / 12 page ![]() Nexperia PBLS4002Y 40 V, 500 mA PNP loadswitch transistor Symbol Parameter Conditions Min Typ Max Unit VI(off) off-state input voltage VCE = 5 V; IC = 100 µA; Tamb = 25 °C - 1.1 0.5 V VI(on) on-state input voltage VCE = 0.3 V; IC = 20 mA; Tamb = 25 °C 2.5 1.9 - V R1 bias resistor 1 (input) 3.3 4.7 6.1 kΩ R2/R1 bias resistor ratio 0.8 1 1.2 Cc collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C - - 2.5 pF 006aaa388 200 400 600 hFE 0 IC (mA) - 10- 1 - 103 - 102 - 1 - 10 (1) (2) (3) VCE = −2 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 1. TR1 (PNP): DC current gain as a function of collector current; typical values VCE (V) 0 - 5 - 4 - 2 - 3 - 1 006aaa394 - 0.4 - 0.6 - 0.2 - 0.8 - 1 IC (A) 0 IB (mA) = - 30 - 3 - 6 - 9 - 12 - 15 - 27 - 24 - 21 - 18 Tamb = 25 °C Fig. 2. TR1 (PNP): Collector current as a function of collector-emitter voltage; typical values 006aaa389 - 0.5 - 0.7 - 0.3 - 0.9 - 1.1 VBE (V) - 0.1 IC (mA) - 10- 1 - 103 - 102 - 1 - 10 (1) (2) (3) VCE = −2 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig. 3. TR1 (PNP): Base-emitter voltage as a function of collector current; typical values 006aaa392 - 0.5 - 0.7 - 0.3 - 0.9 - 1.1 VBEsat (V) - 0.1 IC (mA) - 10- 1 - 103 - 102 - 1 - 10 (1) (2) (3) IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig. 4. TR1 (PNP): Base-emitter saturation voltage as a function of collector current; typical values PBLS4002Y All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2023. All rights reserved Product data sheet 1 January 2023 5 / 12 |
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