Nexperia

PBLS4002Y

40 V, 500 mA PNP loadswitch transistor

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

TR1: PNP low VCEsat transistor

V(BR)CBO

collector-base

breakdown voltage

IC = -100 µA; IE = 0 A; Tamb = 25 °C

-40

-

-

V

V(BR)CEO

collector-emitter

breakdown voltage

IC = -10 mA; IB = 0 A; Tamb = 25 °C

-40

-

-

V

V(BR)EBO

emitter-base

breakdown voltage

IC = 0 A; IE = 100 µA; Tamb = 25 °C

-6

-

-

V

VCB = -40 V; IE = 0 A; Tamb = 25 °C

-

-

-100

nA

ICBO

collector-base cut-off

current

VCB = -40 V; IE = 0 A; Tamb = 150 °C

-

-

-50

µA

IEBO

emitter-base cut-off

current

VEB = -5 V; IC = 0 mA; Tamb = 25 °C

-

-

-100

nA

VCE = -2 V; IC = -10 mA; pulsed;

Tamb = 25 °C

200

-

-

VCE = -2 V; IC = -100 mA; pulsed; tp ≤

300 µs; δ ≤ 0.02; Tamb = 25 °C

150

-

-

hFE

DC current gain

VCE = -2 V; IC = -500 mA; pulsed; tp ≤

300 µs; δ ≤ 0.02; Tamb = 25 °C

40

-

-

IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C

-

-

-50

mV

IC = -100 mA; IB = -5 mA; Tamb = 25 °C

-

-

-130

mV

IC = -200 mA; IB = -10 mA; Tamb = 25 °C

-

-

-200

mV

VCEsat

collector-emitter

saturation voltage

IC = -500 mA; IB = -50 mA; pulsed; tp ≤

300 µs; δ ≤ 0.02 %; Tamb = 25 °C

-

-

-350

mV

RCEsat

collector-emitter

saturation resistance

-

440

700

mΩ

VBEsat

base-emitter saturation

voltage

IC = -500 mA; IB = -50 mA;

Tamb = 25 °C; pulsed; tp ≤ 300 µs;

δfactor ≤ 0.02

-

-

-1.2

V

VBEon

base-emitter turn-on

voltage

VCE = -2 V; IC = -100 mA; Tamb = 25 °C;

pulsed; tp ≤ 300 µs; δfactor ≤ 0.02

-

-

-1.1

V

Cc

collector capacitance

VCB = -10 V; IE = 0 A; ie = 0 A;

f = 1 MHz; Tamb = 25 °C

-

-

10

pF

fT

transition frequency

VCE = -5 V; IC = -100 mA; f = 100 MHz;

Tamb = 25 °C

100

300

-

MHz

TR2: NPN resistor-equipped transistor

V(BR)CBO

collector-base

breakdown voltage

IC = 100 µA; IE = 0 A; Tamb = 25 °C

50

-

-

V

V(BR)CEO

collector-emitter

breakdown voltage

IC = 10 mA; IB = 0 A; Tamb = 25 °C

50

-

-

V

ICBO

collector-base cut-off

current

VCB = 50 V; IE = 0 A; Tamb = 25 °C

-

-

100

nA

VCE = 50 V; IB = 0 A; Tamb = 25 °C

-

-

1

µA

ICEO

collector-emitter cut-off

current

VCE = 50 V; IB = 0 A; Tamb = 150 °C

-

-

50

µA

IEBO

emitter-base cut-off

current

VEB = 5 V; IC = 0 A; Tamb = 25 °C

-

-

900

µA

hFE

DC current gain

VCE = 5 V; IC = 10 mA; Tamb = 25 °C

30

-

-

VCEsat

collector-emitter

saturation voltage

IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C

-

-

150

mV

PBLS4002Y

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2023. All rights reserved

Product data sheet

1 January 2023

4 / 12